Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 3
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Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study
Shekhter, Pini, Mehari, Shlomo, Ritter, Dan, Eizenberg, MosheVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4802917
File:
PDF, 3.90 MB
english, 2013