Effect of BCl3 in chlorine-based plasma on etching 4H-SiC...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 09 Vol. 32; Iss. 5

Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications

Ekinci, Huseyin, Kuryatkov, Vladimir V., Mauch, Daniel L., Dickens, James C., Nikishin, Sergey A.
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4892172
Date:
September, 2014
File:
PDF, 2.37 MB
english, 2014
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