Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison
P. ZwicknaglYear:
1986
Language:
english
DOI:
10.1116/1.583406
File:
PDF, 1.59 MB
english, 1986