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Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy
B. Yang, F. Aqariden, C. H. Grein, A. Jandaska, T. S. Lee, A. Nemani, S. Rujirawat, X. H. Shi, M. Sumstine, S. Velicu, S. SivananthanYear:
1999
Language:
english
DOI:
10.1116/1.590723
File:
PDF, 469 KB
english, 1999