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Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate
Feng, Shih-Wei, Chen, Yu-Yu, Lai, Chih-Ming, Tu, Li-Wei, Han, JungVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4851755
File:
PDF, 2.45 MB
english, 2013