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Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
Capriotti, M., Lagger, P., Fleury, C., Oposich, M., Bethge, O., Ostermaier, C., Strasser, G., Pogany, D.Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4905945
Date:
January, 2015
File:
PDF, 1006 KB
english, 2015