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Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack
Li, Cong, Zhuang, Yi-Qi, Han, RuVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.124202
Date:
December, 2010
File:
PDF, 839 KB
english, 2010