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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
Yeh, Po-Chun, Lin, Yun-Wei, Huang, Yue-Lin, Hung, Jui-Hung, Lin, Bo-Ren, Yang, Lucas, Wu, Cheng-Han, Wu, Tzu-Kuan, Wu, Chao-Hsin, Peng, Lung-HanVolume:
8
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.8.084101
Date:
August, 2015
File:
PDF, 4.51 MB
english, 2015