High temperature silicon carbide MOSFETs with very low...

Electronics Letters 1994 / 01 Vol. 30; Iss. 2

High temperature silicon carbide MOSFETs with very low drain leakage current

Lassagne, P., Bécourt, N., Morfouli, P., Ouisse, T., Baud, L., Billon, T, Ponthenier, J.L., Jassaud, C.
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Volume:
30
Journal:
Electronics Letters
DOI:
10.1049/el:19940098
Date:
January, 1994
File:
PDF, 221 KB
1994
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