Low-power 850 nm optoelectronic integrated circuit receiver...

Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

Park, Kang-Yeob, Youn, Jin-Sung, Kim, Wang-Soo, Lee, Myung-Jae, Choi, Woo-Young
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Volume:
9
Language:
english
Journal:
IET Circuits, Devices & Systems
DOI:
10.1049/iet-cds.2014.0250
Date:
May, 2015
File:
PDF, 723 KB
english, 2015
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