AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates
Marinova, Maya, Jegenyés, Nikoletta, Andreadou, Ariadne, Mantzari, Alkyoni, Lorenzzi, Jean, Ferro, Gabriel, Polychroniadis, Efstathios K., Ferro, Gabriel, Siffert, PaulYear:
2010
Language:
english
DOI:
10.1063/1.3518321
File:
PDF, 696 KB
english, 2010