Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation
Gad, Karim M., Vössing, Daniel, Balamou, Patrice, Hiller, Daniel, Stegemann, Bert, Angermann, Heike, Kasemann, MartinVolume:
353
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2015.07.060
Date:
October, 2015
File:
PDF, 1.03 MB
english, 2015