Vacancy-type defects in 6H–silicon carbide induced by...

Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach

Zhu, C Y, Ling, C C, Brauer, G, Anwand, W, Skorupa, W
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Volume:
41
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/41/19/195304
Date:
October, 2008
File:
PDF, 597 KB
english, 2008
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