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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements
Gregušová, D, Stoklas, R, Eickelkamp, M, Fox, A, Novák, J, Vescan, A, Grützmacher, D, Kordoš, PVolume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/7/075014
Date:
July, 2009
File:
PDF, 366 KB
english, 2009