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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT
Lehmann, J., Leroux, C., Charles, M., Torres, A., Morvan, E., Reimbold, G., Bano, E., Ghibaudo, G.Year:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123439
File:
PDF, 802 KB
english, 2015