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dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology
J. Armand, F. Martinez, P. Benoit, M. Valenza, E. Vincent, V. Huard, K. RochereauYear:
2009
Language:
english
DOI:
10.1116/1.3130166
File:
PDF, 686 KB
english, 2009