Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test
Kimura, Tamotsu, Shigemasa, Ryoji, Ohshima, Tomoyuki, Nishi, SeijiVolume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.L883
Date:
July, 1996
File:
PDF, 691 KB
1996