Shift in Threshold Voltage and Schottky Barrier Height of...

Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test

Kimura, Tamotsu, Shigemasa, Ryoji, Ohshima, Tomoyuki, Nishi, Seiji
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Volume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.L883
Date:
July, 1996
File:
PDF, 691 KB
1996
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