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Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy
Zorn, M, Weyers, MVolume:
40
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/40/3/029
Date:
February, 2007
File:
PDF, 677 KB
english, 2007