High efficiency AlGaInP-based 660–680 nm vertical-cavity...

Electronics Letters 1995 / 02 Vol. 31; Iss. 3

High efficiency AlGaInP-based 660–680 nm vertical-cavity surface emitting lasers

Choquette, K.D., Kilcoyne, S.P., Schneider, R.P., Lear, K.L., Hagerott Crawford, M., Figiel, J.J.
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Volume:
31
Journal:
Electronics Letters
DOI:
10.1049/el:19950124
Date:
February, 1995
File:
PDF, 379 KB
1995
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