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InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy
Reiher, F, Dadgar, A, Bläsing, J, Wieneke, M, Müller, M, Franke, A, Reißmann, L, Christen, J, Krost, AVolume:
42
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/42/5/055107
Date:
March, 2009
File:
PDF, 688 KB
english, 2009