A comparative study of electrochemically formed and...

Semiconductor Science and Technology 2001 / 12 Vol. 16; Iss. 12

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM)

Forment, S, Meirhaeghe, R L Van, Vrieze, A De, Strubbe, K, Gomes, W P
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Volume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/12/305
Date:
December, 2001
File:
PDF, 220 KB
english, 2001
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