An Optimized Resistance Characterization Technique for the...

IEEE Transactions on Nanotechnology 2015 / 5 Vol. 14; Iss. 3

An Optimized Resistance Characterization Technique for the Next Generation Magnetic Random Access Memory

Li, Fei, Lua, Sunny Yan Hwee, Mani, Aarthy
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Volume:
14
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2015.2415524
Date:
May, 2015
File:
PDF, 4.45 MB
english, 2015
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