Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 4
Performance improvement of metal-Al2O3-HfO2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers
Oh, Jinho, Na, Heedo, Lee, Kyumin, Sohn, Hyunchul, Heo, Min-YoungVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4807842
File:
PDF, 1.28 MB
english, 2013