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Photodetector waveguide structures made of epitaxial InGaAs films and intended for integrated circuits manufactured from III-V semiconductor compounds
Shmal'ko, A V, Lamekin, V F, Smirnov, V L, Polyantsev, A S, Kogan, Yu I, Babushkina, T S, Kuntsevich, T S, Peshkovskaya, O GVolume:
20
Language:
english
Journal:
Soviet Journal of Quantum Electronics
DOI:
10.1070/QE1990v020n08ABEH007388
Date:
August, 1990
File:
PDF, 524 KB
english, 1990