Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 09 Vol. 32; Iss. 5

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

Sawicka, Marta, Muziol, Grzegorz, Turski, Henryk, Feduniewicz-Żmuda, Anna, Kryśko, Marcin, Grzanka, Szymon, Grzanka, Ewa, Smalc-Koziorowska, Julita, Albrecht, Martin, Kucharski, Robert, Perlin, Piotr,
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4892216
Date:
September, 2014
File:
PDF, 401 KB
english, 2014
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