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Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
Simanjuntak, Firman Mangasa, Panda, Debashis, Tsai, Tsung-Ling, Lin, Chun-An, Wei, Kung-Hwa, Tseng, Tseung-YuenVolume:
50
Language:
english
Journal:
Journal of Materials Science
DOI:
10.1007/s10853-015-9247-y
Date:
November, 2015
File:
PDF, 2.06 MB
english, 2015