Fundamental processes in Si/Si and Ge/Si epitaxy studied by...

Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Bert Voigtländer
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Volume:
43
Year:
2001
Language:
english
Pages:
128
DOI:
10.1016/s0167-5729(01)00012-7
File:
PDF, 4.67 MB
english, 2001
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