Injection InGaSbAs laser emitting at 2.4...

Soviet Journal of Quantum Electronics 1986 / 10 Vol. 16; Iss. 10

Injection InGaSbAs laser emitting at 2.4 μ (300K)

Bochkarev, A É, Dolginov, L M, Drakin, A E, Druzhinina, L V, Eliseev, P G, Sverdlov, B N, Skripkin, V A
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Volume:
16
Language:
english
Journal:
Soviet Journal of Quantum Electronics
DOI:
10.1070/QE1986v016n10ABEH007580
Date:
October, 1986
File:
PDF, 722 KB
english, 1986
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