High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE
Ma, Hong, Chen, Sihai, Yi, Xinjian, Zhu, Guangxi, Jin, JinyanVolume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/7/007
Date:
July, 2004
File:
PDF, 440 KB
english, 2004