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Capacitance study of selectively doped SiGe/Si heterostructures
Antonova, I V, Obodnikov, V I, Kagan, M S, Troeger, R T, Ray, S K, Kolodzey, JVolume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/5/001
Date:
May, 2005
File:
PDF, 222 KB
english, 2005