Instability phenomenon originated from the disordered layer...

Semiconductor Science and Technology 2008 / 02 Vol. 23; Iss. 2

Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement

Özdemir, Orhan, Anutgan, Mustafa, Aliyeva-Anutgan, Tamila, Atılgan, İsmail, Katırcıoğlu, Bayram
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Volume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/2/025006
Date:
February, 2008
File:
PDF, 349 KB
english, 2008
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