Characterization of thin epitaxial CaF 2...

Semiconductor Science and Technology 1992 / 12 Vol. 7; Iss. 12

Characterization of thin epitaxial CaF 2 layers on Si(111) using impurity luminescent probes, X-ray standing waves and X-ray diffractometry

Alvarez, J C, Hirano, K, Kazimirov, A Yu, Kovalchuk, M V, Kreines, A Ya, Sokolov, N S, Yakovlev, N L
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Volume:
7
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/7/12/001
Date:
December, 1992
File:
PDF, 427 KB
english, 1992
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