[IEEE 2014 20th International Conference on Ion Implantation Technology (IIT) - Portland, OR, USA (2014.6.26-2014.7.4)] 2014 20th International Conference on Ion Implantation Technology (IIT) - Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs

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