Temperature Dependence of the Surface- and Buffer-Induced...

IEEE Transactions on Electron Devices 2015 / 8 Vol. 62; Iss. 8

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Zhang, Chuan, Wang, Maojun, Xie, Bing, Wen, Cheng P., Wang, Jinyan, Hao, Yilong, Wu, Wengang, Chen, Kevin J., Shen, Bo
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2446504
Date:
August, 2015
File:
PDF, 3.36 MB
english, 2015
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