Three Dimensional Transient Simulation of Complex Silicon...

Japanese Journal of Applied Physics 1990 / 12 Vol. 29; Iss. Part 2, No

Three Dimensional Transient Simulation of Complex Silicon Devices

Conti, Paolo, Heiser, Gernot, Fichtner, Wolfgang
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L2271
Date:
December, 1990
File:
PDF, 183 KB
english, 1990
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