Low-Temperature Chemical Vapor Deposition of Silicon...

Japanese Journal of Applied Physics 1994 / 10 Vol. 33; Iss. Part 2, No

Low-Temperature Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane ($\bf Si(NCO)_{4}$)

Taniguchi, Hitoshi, Sugiura, Osamu
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L1485
Date:
October, 1994
File:
PDF, 560 KB
english, 1994
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