A New Lateral Trench Electrode Insulated Gate Bipolar...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics

Sung, Man Young, Kang, Ey Goo, Kim, Dae Jong, Kim, Sang sig
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.2119
Date:
April, 2003
File:
PDF, 643 KB
english, 2003
Conversion to is in progress
Conversion to is failed