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Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region
Kamimura, Takafumi, Maeda, Masatoshi, Sakamoto, Kazue, Matsumoto, KazuhikoVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.461
Date:
January, 2005
File:
PDF, 566 KB
english, 2005