Analysis of Local Breakdown Process in Stressed Gate SiO...

Japanese Journal of Applied Physics 2005 / 10 Vol. 44; Iss. 10

Analysis of Local Breakdown Process in Stressed Gate SiO 2 Films by Conductive Atomic Force Microscopy

Seko, Akiyoshi, Watanabe, Yukihiko, Kondo, Hiroki, Sakai, Akira, Zaima, Shigeaki, Yasuda, Yukio
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.7582
Date:
October, 2005
File:
PDF, 1.10 MB
english, 2005
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