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Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
Negoro, Yuki, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Pensl, GerhardVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.5053
Date:
August, 2007
File:
PDF, 884 KB
english, 2007