Simulation of Phase Change Random Access Memory for Low...

Japanese Journal of Applied Physics 2009 / 6 Vol. 48; Iss. 6

Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

Gong, Yue-feng, Ling, Yun, Song, Zhi-tang, Feng, Song-lin
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.064505
Date:
June, 2009
File:
PDF, 652 KB
english, 2009
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