Study of stress-induced leakage current in scaled SiO2

Electronics Letters 1995 Vol. 31; Iss. 14

Study of stress-induced leakage current in scaled SiO2

Han, L.K., Wang, H.H., Yan, J., Kwong, D.L.
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Volume:
31
Year:
1995
Journal:
Electronics Letters
DOI:
10.1049/el:19950792
File:
PDF, 375 KB
1995
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