Total ionizing dose effects of novel vertical channel double-gate nMOSFETs
An, Xia, Lu, Qing, Huang, Ru, Wang, Wenhua, Xue, Shoubin, He, Baoping, Zhang, XingVolume:
24
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/24/8/085012
Date:
August, 2009
File:
PDF, 218 KB
english, 2009