The impact of etched trenches geometry and dielectric...

Nanotechnology 2011 / 10 Vol. 22; Iss. 43

The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

Farhi, G, Morris, D, Charlebois, S A, Raskin, J-P
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Volume:
22
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/22/43/435203
Date:
October, 2011
File:
PDF, 643 KB
english, 2011
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