Effect of Residual Stress on Hole Mobility of SOS MOS...

Japanese Journal of Applied Physics 1978 / 9 Vol. 17; Iss. 9

Effect of Residual Stress on Hole Mobility of SOS MOS Devices

Onga, Shinji, Hatanaka, Katunori, Kawaji, Shinji, Nishi, Yoshio, Yasuda, Yukio
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Volume:
17
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.17.1587
Date:
September, 1978
File:
PDF, 643 KB
english, 1978
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