Silicon HBT with a Low-Resistivity Amorphous SiC...

Japanese Journal of Applied Physics 1989 / 2 Vol. 28; Iss. Part 2, No

Silicon HBT with a Low-Resistivity Amorphous SiC x Emitter

Kuwagaki, Mamoru, Imai, Kazuo, Ogino, Toshio, Amemiya, Yoshihito
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.28.l173
Date:
February, 1989
File:
PDF, 521 KB
1989
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