Thermal Degradation of HfSiON Dielectrics Caused by TiN...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Watanabe, Heiji, Yoshida, Shiniti, Watanabe, Yasumasa, Shimura, Takayoshi, Yasutake, Kiyoshi, Akasaka, Yasushi, Nara, Yasuo, Nakamura, Kunio, Yamada, Keisaku
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.2933
Date:
April, 2006
File:
PDF, 147 KB
english, 2006
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