Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
Ishihara, Takamitsu, Uchida, Ken, Koga, Junji, Takagi, Shin-ichiVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.3125
Date:
April, 2006
File:
PDF, 249 KB
english, 2006