Fabrication of a Vertical-Channel Double-Gate...

Japanese Journal of Applied Physics 2006 / 3 Vol. 45; Iss. No. 10

Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

Endo, Kazuhiko, Noda, Shuichi, Masahara, Meishoku, Kubota, Tomohiro, Ozaki, Takuya, Samukawa, Seiji, Liu, Yongxun, Ishii, Kenichi, Ishikawa, Yuki, Sugimata, Etsuro, Matsukawa, Takashi, Takashima, Hide
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.l279
Date:
March, 2006
File:
PDF, 198 KB
english, 2006
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