In situ Doped Embedded-SiGe Source/Drain...

Japanese Journal of Applied Physics 2008 / 4 Vol. 47; Iss. 4

In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Okamoto, Hiroki, Hokazono, Akira, Adachi, Kanna, Yasutake, Nobuaki, Itokawa, Hiroshi, Okamoto, Shintaro, Kondo, Masaki, Tsujii, Hideji, Ishida, Tatsuya, Aoki, Nobutoshi, Fujiwara, Makoto, Kawanaka, Sh
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.2564
Date:
April, 2008
File:
PDF, 248 KB
english, 2008
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